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Data Sheet No. PD60200 rev B
IR2304(S) & (PbF)
Features
? Floating channel designed for bootstrap operation
HALF-BRIDGE DRIVER
Product Summary
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to +600V. Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Under voltage lockout for both channels
3.3V, 5V, and 15V input logic input compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Lower di/dt gate driver for better noise immunity
Internal 100ns dead-time
Output in phase with input
Available in Lead-Free
V OFFSET
I O+/- (min)
V OUT
Delay Matching
Internal deadtime
t on/off (typ.)
Package
600V max.
60 mA/130 mA
10 - 20V
50 ns
100 ns
220/220 ns
Description
The IR2304(S) are a high voltage, high speed
power MOSFET and IGBT driver with inde-
pendent high and low side referenced output
channels. Proprietary HVIC and latch immune
8-Lead PDIP
8 Lead SOIC
CMOS technologies
2106/2301/2108/2109/2302/2304 Feature Comparison
enable ruggedized monolithic construction.
The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic.
The output driver features a high pulse cur-
rent buffer stage designed for minimum driver
cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET
or IGBT in the high side configuration which
operates up to 600 volts.
Part
2106/2301
21064
2108
21084
2109/2302
21094
2304
Input
logic
HIN/LIN
HIN/LIN
IN/SD
HIN/LIN
Cross-
conduction
prevention
logic
no
yes
yes
yes
Dead-Time
none
Internal 540ns
Programmable 0.54~5 μ s
Internal 540ns
Programmable 0.54~5 μ s
Internal 100ns
Ground Pins
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
COM
Block Diagram
Vcc
up to 600V
HIN
LIN
LIN
HIN
VB
HO
www.irf.com
VCC
COM
IR2304
VS
LO
TO
LOAD
1
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